1 n-channel 20 v (d-s) mosfet fe atures ? t renchfet ? power m osfet applicat ions ? l oad switching for portable devices ? dc/dc converter notes: a. surfa c e mounted on 1" x 1" fr4 board. b. pulse width limited by maximum junction temperature. product summ ary v ds (v) r d s (on) ( ? )i d (a ) q g (t yp .) 20 0.040 at v gs = 4. 5 v 3.8 3.5 0.055 at v gs = 2. 5 v 2.6 g s d t op v iew 2 3 (so t -23) 1 absolute maximum ratings (t a = 25 c, unless otherwise noted) p arameter symb ol 5 s steady state unit drain-source voltage v ds 20 v gat e -source voltage v gs 8 contin uous d rain current (t j = 150 c ) a t a = 25 c i d 3. 8 3.6 a t a = 70 c 2. 3 2.1 pulsed dr ain current b i dm 10 contin uous sou rce current (diode conduction) a i s 0.7 2 0.6 p ower dissipation a t a = 25 c p d 0.8 6 0.71 w t a = 70 c 0.5 5 0.46 ope rating junction and storage temperature range t j , t stg - 55 to 150 c thermal resist ance ratings p a rameter symbol typical maximum unit maximum junction-to-ambient a t ? 5 s r thj a 120 14 5 c/w steady state 140 175 maximum junction-to-foot steady state r thjf 62 78 dt s 2300s www.din-tek.jp
2 no t es: a. pulse test: pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. ty pi cal characteristics (25 c, unless otherwise noted) s pecif ications (t a = 25 c, unless otherwise noted) p a rameter symbol test conditions limits unit min. typ. max. static drain-source breakdo wn voltage v ds v gs = 0 v, i d = 250 a 20 v gate-thre s hold voltage v gs(t h) v ds = v gs , i d = 250 a 0. 40 0.85 gate-b ody leakage i gss v ds = 0 v , v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 20 v , v gs = 0 v 0.1 a v ds = 20 v , v gs = 0 v , t j = 50 c 4 v ds = 20 v , v gs = 0 v , t j = 70 c 15 on-state dr ain current a i d( on) v ds t 10 v , v gs = 4.5 v 6a drain-source on-resistance a r ds( on) v gs = 4.5 v , i d = 3.6 a 0.035 0.040 : v gs = 2.5 v, i d = 3.1 a 0.045 0.055 f orward transconductance a g fs v ds = 5 v , i d = 3.6 a 13 s diode forward voltage v sd i s = 0. 95 a, v gs = 0 v 0.7 1.2 v dy nam ic b t o tal gate charge q g v ds = 10 v , v gs = 4.5 v, i d = 3.6 a 3.5 5.5 nc gate-source charge q gs 0.6 gate- dr ain charge q gd 0.45 g a te resistance r g f = 1 m hz 2 4 8 : switc h ing tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 2.78 : i d # 3.6 a, v gen = 4.5 v, r g = 1 : 815 ns rise time t r 71 5 t urn-off delay time t d( off) 30 4 5 fall time t f 71 5 source-dr ain reverse recovery time t rr i f = 3.6 a, di/dt = 100 a/s 8.5 15 body diode reverse recovery charge q rr 24 n c ou tpu t characteristics 0 1 2 3 4 10 0.0 0.5 1.0 1.5 2.0 v ds - drain -to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =5 v thr u 2 v v gs =1 v v gs =1 . 5 v t r ansfer characteristics 0 1 2 3 4 10 0.0 0 .4 0. 8 1.2 1.6 2.0 v gs - g ate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c ' 7 6 6 z z z g l q w h n m s
3 typica l c haracteristics (25 c, unless otherwise noted) tran sfer ch aracteristics capacitance on-resistance vs. junction temperature 0.0 0.4 0. 8 1.2 1.6 2.0 0.0 0 .3 0.6 0.9 1.2 1.5 v gs - g ate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c 0 8 0 160 240 320 400 0 5 10 15 20 c is s v ds - drain -to-so u rce v oltage ( v ) c - capacitance (pf) c oss c rss 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction t emperat u re (c) ( n ormalized) - on - resistance r ds(on) v gs =2 . 5 v ,i d =3 . 1a v gs =4 . 5 v ,i d =3 . 6a on -re sistance vs. drain current gate charge source-drain diode forward voltage 0.03 0.04 0.05 0.06 0.07 02 4 6 8 10 - on - resistance ( ) r ds( on) i d - drain c u rrent (a) v gs =2 . 5 v v gs =4 . 5 v i d =3 . 6a 0 1 2 3 4 5 012 34 - gate - to-so u rce v oltage ( v ) q g - t otal gate charge (nc) v gs v ds = 15 v v ds =1 0 v v ds = 5 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -s o u rce -to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c t j = - 55 c dt s 2300s www.din-tek.jp
4 ty pi cal characteristics (25 c, unless otherwise noted) . on-r esistan ce vs. gate-to-source voltage single pulse power 0.04 0.06 0.0 8 0.10 0.12 0 1234 5 - on - resistance ( ) r ds(on) v gs - g ate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 t i me (s) po w er ( w ) t a = 25 c thresh old voltage safe operating area, junction-to-ambient - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs( th) t j - t emperat u re (c) i d =1m a v ds - drain -to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds (on) is specified - drain c u rrent (a) i d 5 0.1 0.1 1 10 1 t a = 25 c single p u lse 1m s 10 ms 100 ms 0.01 100 s, dc b v dss limited 100 100 s limited b yr ds(on)* 1s 10 s norm alized t hermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 7 0 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rf ace mo u nted d u t y cycle = 0.5 0.02 ' 7 6 2300s www.din-tek.jp
1 sot-23 ( to-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimet ers inches mi n max mi n max a 0 .89 1.12 0.035 0.044 a 1 0 .01 0.10 0.0004 0.004 a 2 0 .88 1.02 0.0346 0.040 b 0. 3 5 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1 .20 1.40 0.047 0.055 e 0.95 bsc 0.0 374 ref e 1 1.90 bsc 0.0 748 ref l 0.40 0.60 0.016 0.024 l 1 0.6 4 ref 0.025 ref s 0.50 ref 0. 020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information www.din-tek.jp
1 application note rec ommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index r etur n to index application note www.din-tek.jp
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